Datasheet > BAS21AVD,115

BAS21AVD,115

更新时间： 2024-11-20 03:50:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	132K
描述
DIODE 250 V, 3 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-74, 6 PIN, Signal Diode

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BAS21AVD,115 数据手册

BAS21AVD

T457

High-voltage switching diodes

Rev. 1 — 10 January 2011

Product data sheet

1. Product profile

1.1 General description

Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) small

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

High switching speed: t_rr≤ 50 ns

Reverse voltage: V_R≤ 200 V

Low capacitance: C_d≤ 5 pF

AEC-Q101 qualified

Repetitive peak reverse voltage:

V_RRM≤ 250 V

Repetitive peak forward current:

I_FRM≤ 1 A

Small SMD plastic package

1.3 Applications

High-voltage switching in surface-mounted circuits

Automotive

Communication

1.4 Quick reference data

Table 1.

Quick reference data

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Per diode

[1][2]

[1]

I_F

forward current

200

100

200

I_R

V_R

t_rr

reverse current

V_R= 200 V

reverse voltage

reverse recovery time

[3]

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] When switched from I_F= 30 mA to I_R= 30 mA; R_L= 100 Ω; measured at I_R= 3 mA.

12 3 4 5 6 7...12

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