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BAS21ARFG PDF预览

BAS21ARFG

更新时间: 2024-11-23 08:48:23
品牌 Logo 应用领域
TSC 二极管开关
页数 文件大小 规格书
3页 120K
描述
225mW SMD Switching Diode

BAS21ARFG 数据手册

 浏览型号BAS21ARFG的Datasheet PDF文件第2页浏览型号BAS21ARFG的Datasheet PDF文件第3页 
BAS21 / A / C / S  
225mW SMD Switching Diode  
Small Signal Diode  
SOT-23  
A
F
Features  
—Fast switching speed  
B
E
—Surface device type mounting  
—Moisture sensitivity level 1  
C
G
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Dimensions  
Min  
2.80  
1.20  
0.30  
1.80  
2.25  
0.90  
Max  
Min  
Max  
Mechanical Data  
—Case :SOT-23 small outline plastic package  
A
B
C
D
E
F
3.00 0.110 0.118  
1.40 0.047 0.055  
0.50 0.012 0.020  
2.00 0.071 0.079  
2.55 0.089 0.100  
1.20 0.035 0.043  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Weight : 0.008gram (approximately)  
—Marking Code : JS,JS2,JS3,JS4  
G
0.550 REF  
0.022 REF  
Pin Configuration  
BAS21  
BAS21A  
BAS21C  
BAS21S  
Ordering Information  
Suggested PAD Layout  
Part No.  
BAS21 RF  
Package  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
Packing  
Marking  
JS  
0.95  
0.037  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
BAS21A RF  
BAS21C RF  
BAS21S RF  
BAS21 RFG  
BAS21A RFG  
BAS21C RFG  
BAS21S RFG  
JS2  
JS3  
JS4  
JS  
2.0  
0.079  
0.9  
0.035  
JS2  
JS3  
JS4  
0.8  
0.031  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
225  
Units  
mW  
V
Power Dissipation  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
VRRM  
IFRM  
250  
625  
mA  
mA  
A
IO  
200  
Non-Repetitive Peak Forward Surge Current (Note 1)  
Thermal Resistance (Junction to Ambient) (Note 2)  
Junction and Storage Temperature Range  
IFSM  
1
RθJA  
TJ, TSTG  
500  
°C/W  
°C  
-55 to + 150  
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec  
Notes:2. Valid provided that electrodes are kept at ambient temperature  
Version : C10  

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