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BAS21ARF PDF预览

BAS21ARF

更新时间: 2024-01-22 10:18:54
品牌 Logo 应用领域
TSC 二极管开关光电二极管
页数 文件大小 规格书
2页 75K
描述
225mW SMD Switching Diode

BAS21ARF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.57二极管类型:RECTIFIER DIODE
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS21ARF 数据手册

 浏览型号BAS21ARF的Datasheet PDF文件第2页 
BAS21 / A / C / S  
225mW SMD Switching Diode  
Small Signal Diode  
SOT-23  
F
A
Features  
—Fast switching speed  
B
E
—Surface device type mounting  
—Moisture sensitivity level 1  
C
G
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Min Max  
Dimensions  
Min  
2.80  
1.20  
0.30  
1.80  
2.25  
0.90  
Max  
Mechanical Data  
—Case :SOT-23 small outline plastic package  
A
B
C
D
E
F
3.00 0.110 0.118  
1.40 0.047 0.055  
0.50 0.012 0.020  
2.00 0.071 0.079  
2.55 0.089 0.100  
1.20 0.035 0.043  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Weight : 0.008gram (approximately)  
G
0.550 REF  
0.022 REF  
BAS21  
BAS21S  
BAS21C  
BAS21A  
Ordering Information  
Part No.  
Packing  
Package  
SOT-23  
BAS21/A/C/S RF  
3Kpcs/ 7" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
Units  
mW  
V
Power Dissipation  
225  
250  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
VRRM  
IFRM  
625  
mA  
mA  
A
IO  
200  
Non-Repetitive Peak Forward Surge Current (Note 1)  
Thermal Resistance (Junction to Ambient) (Note 2)  
Junction and Storage Temperature Range  
IFSM  
1
RθJA  
TJ, TSTG  
500  
°C/W  
°C  
-55 to + 150  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
-
Units  
V
Reverse Breakdown Voltage  
IR=  
V(BR)  
250  
100μA  
100mA  
200mA  
200V  
IF=  
-
-
-
-
-
1.00  
1.25  
100  
5
V
Forward Voltage  
VF  
IF=  
V
VR=  
VR=1V,  
IR  
μA  
pF  
ns  
Reverse Leakage Current  
Junction Capacitance  
f=1.0MHz  
CJ  
Trr  
Reverse Recovery Time IF=IR=10mA, RL=100, IRR=1mA  
50.0  
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec  
Notes:2. Valid provided that electrodes are kept at ambient temperature  
Version : B09  

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