Datasheet > BAS21AP

BAS21AP

更新时间： 2024-02-10 05:02:03

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	326K
描述
DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode

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中文翻译

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数据手册

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BAS21AP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAS21A/C/S

Micro Commercial Components

Features

•

Power dissipation: 225mW (T_amb=25℃)

225mW 250Volt

Switching Diode

Forward current: 200mA

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

SOT-23

BAS21A

BAS21C

BAS21S

Marking: JS2

Marking: JS3

Marking: JS4

Maximum Ratings

•

Operating Temperature: -55℃ to +150℃

Storage Temperature: -55℃ to +150℃

DIMENSIONS

Electrical Characteristics @ 25°C Unless Otherwise Specified

INCHES

MIN

Reverse Breakdown

Voltage

Maximum

V_(BR)

250V

I_R=100μA

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

Instantaneous

Forward Voltage

V_F

1100mV

I_FM= 100mA;

T_J= 25℃

Maximum DC

V_R=200Volts

Reverse Current At

Rated DC Blocking

Voltage

I_R

T_J= 25℃

1µA

.085

.37

Suggested Solder

Pad Layout

Diode Capacitance

C_D

T_rr

5pF

Measured at

1.0MHz, V_R=0V

.031

.800

Reverse Recovery

Time

50nS

.035

.900

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

Revision: 3

2006/06/13

1 of 2

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