Datasheet > BAS21AHT1G_10

BAS21AHT1G_10

更新时间： 2024-01-24 16:14:08

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
3页	128K
描述
Low Leakage Switching Diode

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BAS21AHT1G_10 数据手册

BAS21AHT1G

Low Leakage

Switching Diode

Features

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

LOW LEAKAGE

SWITCHING DIODE

MAXIMUM RATINGS

Symbol

Rating

Value

250

Unit

Vdc

Continuous Reverse Voltage

Repetitive Peak Reverse Voltage

Peak Forward Current

CATHODE

ANODE

250

Vdc

RRM

200

mAdc

Peak Forward Surge Current

625

FM(surge)

MARKING

DIAGRAM

THERMAL CHARACTERISTICS

Symbol

Characteristic

Max

Unit

Total Device Dissipation FR--5 Board,

200

AA M G

SOD--323

CASE 477

STYLE 1

(Note 1)

T = 25C

Derate above 25C

1.57

635

mW/C

C/W

Thermal Resistance,

Junction--to--Ambient

= Device Code

= Date Code*

= Pb--Free Package

T , T

Junction and Storage Temperature

Range

--55 to +150

C

stg

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR--5 Minimum Pad

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

BAS21AHT1G

SOD--323

(Pb--Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.



Semiconductor Components Industries, LLC, 2010

Publication Order Number:

August, 2010 -- Rev. 1

BAS21AHT1/D

12 3

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