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BAS21AHT1D PDF预览

BAS21AHT1D

更新时间: 2024-11-23 06:41:27
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
3页 128K
描述
Low Leakage Switching Diode

BAS21AHT1D 数据手册

 浏览型号BAS21AHT1D的Datasheet PDF文件第2页浏览型号BAS21AHT1D的Datasheet PDF文件第3页 
BAS21AHT1G  
Low Leakage  
Switching Diode  
Features  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
LOW LEAKAGE  
SWITCHING DIODE  
MAXIMUM RATINGS  
Symbol  
Rating  
Value  
250  
Unit  
Vdc  
V
Continuous Reverse Voltage  
Repetitive Peak Reverse Voltage  
Peak Forward Current  
R
1
2
CATHODE  
ANODE  
V
250  
Vdc  
RRM  
I
200  
mAdc  
mAdc  
F
I
Peak Forward Surge Current  
625  
FM(surge)  
MARKING  
DIAGRAM  
2
THERMAL CHARACTERISTICS  
Symbol  
Characteristic  
Max  
Unit  
1
P
Total Device Dissipation FR--5 Board,  
200  
mW  
AA M G  
D
SOD--323  
CASE 477  
STYLE 1  
(Note 1)  
T = 25C  
A
G
Derate above 25C  
1.57  
635  
mW/C  
C/W  
R
θ
Thermal Resistance,  
Junction--to--Ambient  
JA  
AA  
M
G
= Device Code  
= Date Code*  
= Pb--Free Package  
T , T  
Junction and Storage Temperature  
Range  
--55 to +150  
C  
J
stg  
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR--5 Minimum Pad  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAS21AHT1G  
SOD--323  
(Pb--Free)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 -- Rev. 1  
BAS21AHT1/D  

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