Datasheet > BAS21-D0RFG

BAS21-D0RFG

更新时间： 2024-11-27 01:13:43

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	218K
描述
225mW SMD Switching Diode

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中文翻译

获取价格

数据手册

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BAS21-D0RFG 数据手册

BAS21 / A / C / S

Taiwan Semiconductor

Small Signal Product

225mW SMD Switching Diode

FEATURES

- Fast switching speed

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

SOT-23

MECHANICAL DATA

- Case: SOT-23 small outline plastic package

- Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed : 260°C/10s

- Weight: 8 ± 0.5 mg

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power Dissipation

225

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

V_RRM

I_FRM

250

625

^oC/W

^oC

Mean Forward Current

I_O

200

Non-Repetitive Peak Forward Surge Current

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

(Note 1)

(Note 2)

I_FSM

R_θJA

500

T_J, T_STG

-55 to +150

Notes : 1. Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) pulse width = 1 μsec

2. Valid provided that electrodes are kept at ambient temperature

PARAMETER

MIN

250

MAX

SYMBOL

UNIT

I_R= 100 μA

I_F= 100 mA

I_F= 200 mA

V_R= 200 V

Reverse Breakdown Voltage

Forward Voltage

V_R(BR)

1.00

1.25

0.1

V_F

Reverse Leakage Current

Junction Capacitance

I_R

C_J

trr

μA

V_R= 1 V , f = 1.0 MHz

I_F= I_R= 30mA , R_L= 100Ω , I_RR= 1mA

Reverse Recovery Time

Document Number: DS_S1412039

Version: D14

12 3 4 5

中文翻译

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