5秒后页面跳转
BAS19LT3 PDF预览

BAS19LT3

更新时间: 2024-11-05 21:53:23
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关光电二极管高压
页数 文件大小 规格书
6页 56K
描述
High Voltage Switching Diode

BAS19LT3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.43Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:0.625 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240最大功率耗散:0.385 W
认证状态:Not Qualified最大重复峰值反向电压:120 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BAS19LT3 数据手册

 浏览型号BAS19LT3的Datasheet PDF文件第2页浏览型号BAS19LT3的Datasheet PDF文件第3页浏览型号BAS19LT3的Datasheet PDF文件第4页浏览型号BAS19LT3的Datasheet PDF文件第5页浏览型号BAS19LT3的Datasheet PDF文件第6页 
BAS19LT1, BAS20LT1,  
BAS21LT1, BAS21DW5T1  
Preferred Devices  
High Voltage  
Switching Diode  
Device Marking:  
http://onsemi.com  
BAS19LT1 = JP  
BAS20LT1 = JR  
BAS21LT1 = JS  
BAS21DW5T1 = JS  
HIGH VOLTAGE  
SWITCHING DIODE  
SOT−23  
Features  
3
1
Pb−Free Packages are Available  
CATHODE  
ANODE  
SC−88A  
5
1
MAXIMUM RATINGS  
CATHODE  
ANODE  
Rating  
Symbol Value  
Unit  
4
3
Continuous Reverse Voltage  
V
R
Vdc  
CATHODE  
ANODE  
120  
200  
250  
BAS19  
BAS20  
BAS21  
MARKING DIAGRAMS  
Repetitive Peak Reverse Voltage  
V
Vdc  
RRM  
Jx M  
120  
200  
250  
BAS19  
BAS20  
BAS21  
SOT−23 (TO−236)  
CASE 318  
Jx = Specific Device Code  
x = P, R or S  
M = Date Code  
STYLE 8  
Continuous Forward Current  
Peak Forward Surge Current  
Maximum Junction Temperature  
Power Dissipation (Note 4)  
I
F
200  
625  
150  
385  
mAdc  
mAdc  
°C  
I
FM(surge)  
T
Jmax  
P
mW  
D
d
XX  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
SC−88A (SOT−353)  
CASE 419A  
XX= Specific Device Code  
d
= Date Code  
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 7  
BAS19LT1/D  

与BAS19LT3相关器件

型号 品牌 获取价格 描述 数据表
BAS19LT3G ONSEMI

获取价格

High Voltage Switching Diode
BAS19-Q NEXPERIA

获取价格

High-voltage switching diodeProduction
BAS19RF TSC

获取价格

Surface Mount Fast Switching Diode
BAS19RFG TSC

获取价格

Surface Mount Fast Switching Diode
BAS19S62Z TI

获取价格

100V, SILICON, SIGNAL DIODE, TO-236AB
BAS19-T NXP

获取价格

DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
BAS19T/R NXP

获取价格

DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
BAS19T/R PHILIPS

获取价格

Rectifier Diode, 1 Element, 0.2A, 100V V(RRM)
BAS19-T1 WTE

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAS19-T1 SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, PLASTIC PACKAGE-3