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BAS19-V-GS08 PDF预览

BAS19-V-GS08

更新时间: 2024-11-06 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 小信号开关二极管高压
页数 文件大小 规格书
6页 116K
描述
Small Signal Switching Diodes, High Voltage

BAS19-V-GS08 技术参数

是否无铅: 不含铅生命周期:Obsolete
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.3
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2.5 A
元件数量:1端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.25 W认证状态:Not Qualified
最大重复峰值反向电压:120 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAS19-V-GS08 数据手册

 浏览型号BAS19-V-GS08的Datasheet PDF文件第2页浏览型号BAS19-V-GS08的Datasheet PDF文件第3页浏览型号BAS19-V-GS08的Datasheet PDF文件第4页浏览型号BAS19-V-GS08的Datasheet PDF文件第5页浏览型号BAS19-V-GS08的Datasheet PDF文件第6页 
BAS19-V / 20-V / 21-V  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
Features  
• Silicon Epitaxial Planar Diode  
3
• Fast switching diode in case SOT-23,  
especially suited for automatic insertion.  
e3  
• These diodes are also available in other  
1
2
16923  
case styles including:the SOD-123 case with the  
type designations BAV19W-V to BAV21W-V, the  
Mini-MELF case with the type designation  
BAV101 to BAV103, the DO-35 case with the type  
designations BAV19-V to BAV21-V and the SOD-  
323 case with type designation BAV19WS-V to  
BAV21WS-V.  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Type differentiation  
VRRM = 120 V  
Ordering code  
Marking  
Remarks  
BAS19-V  
BAS19-V-GS18 or BAS19-V-GS08  
A8  
Tape and Reel  
Tape and Reel  
Tape and Reel  
BAS20-V  
BAS21-V  
VRRM = 200 V  
BAS20-V-GS18 or BAS20-V-GS08  
BAS21-V-GS18 or BAS21-V-GS08  
A81  
A82  
V
RRM = 250 V  
Document Number 85540  
Rev. 1.5, 22-Jul-05  
www.vishay.com  
1

BAS19-V-GS08 替代型号

型号 品牌 替代类型 描述 数据表
BAS19 VISHAY

完全替代

Surface Mount Switching Diode
BAS19T/R NXP

类似代替

DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
BAS19LT1G ONSEMI

功能相似

High Voltage Switching Diode

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