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BAS19-T3 PDF预览

BAS19-T3

更新时间: 2024-11-28 22:48:11
品牌 Logo 应用领域
WTE 二极管开关
页数 文件大小 规格书
3页 49K
描述
SURFACE MOUNT FAST SWITCHING DIODE

BAS19-T3 数据手册

 浏览型号BAS19-T3的Datasheet PDF文件第2页浏览型号BAS19-T3的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
BAS19 – BAS21  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
!
High Conductance  
L
!
!
Fast Switching  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
A
TOP VIEW  
!
!
For General Purpose and Switching  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
B
C
M
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
E
D
SOT-23  
Min  
H
G
Dim  
A
Max  
0.51  
1.40  
2.50  
1.05  
0.61  
2.05  
3.05  
0.15  
1.10  
0.61  
0.178  
0.37  
1.19  
2.10  
0.89  
0.45  
1.78  
2.65  
0.013  
0.89  
0.45  
0.076  
Mechanical Data  
B
!
!
Case: SOT-23, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 0.008 grams (approx.)  
Mounting Position: Any  
Marking: BAS19 A8  
K
C
D
J
E
G
H
!
!
!
!
J
K
L
TOP VIEW  
M
BAS20 A80  
BAS21 A82  
All Dimensions in mm  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
BAS19  
BAS20  
BAS21  
Unit  
Non-Repetitive Peak Reverse Voltage  
VRM  
120  
200  
150  
250  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
100  
200  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
Peak Forward Surge Current (Note 1)  
Power Dissipation (Note 1)  
IF  
IO  
400  
200  
mA  
mA  
A
@ t = 1.0µs  
IFSM  
Pd  
2.5  
350  
mW  
K/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
500  
-65 to +150  
Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
1.0  
1.25  
@ IF = 100mA  
@ IF = 200mA  
Forward Voltage  
VF  
V
Reverse Leakage Current  
Junction Capacitance  
IR  
Cj  
100  
5.0  
nA  
pF  
@ Rated DC Blocking Voltage  
VR = 0V, f = 1.0MHz  
IF = IR = 30mA,  
IRR = 0.1 x IR, RL = 100  
Reverse Recovery Time  
trr  
50  
nS  
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.  
BAS19 – BAS21  
1 of 3  
© 2002 Won-Top Electronics  

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