Datasheet > BAS19-Q

BAS19-Q

更新时间： 2024-11-02 17:15:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	191K
描述
High-voltage switching diodeProduction

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BAS19-Q 数据手册

BAS19-Q

High-voltage switching diode

17 April 2024

Product data sheet

1. General description

High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD)

plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current

Reverse voltage V_R≤ 100 V

Low capacitance: C_d≤ 5 pF

Small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching at high voltage

High-voltage general-purpose switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

200

100

Unit

I_F

forward current

reverse current

reverse voltage

continuous

I_R

V_R

t_rr

V_R= 100 V; T_j= 25 °C

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

anode

Simplified outline

Graphic symbol

n.c.

not connected

cathode

n.c.

006aaa764

SOT23

12 3 4 5 6 7...9

中文翻译

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