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BAS19-GS08 PDF预览

BAS19-GS08

更新时间: 2024-09-15 21:05:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
3页 43K
描述
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM),

BAS19-GS08 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.8
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-609代码:e3
最大非重复峰值正向电流:2.5 A元件数量:1
最高工作温度:150 °C最大输出电流:0.2 A
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

BAS19-GS08 数据手册

 浏览型号BAS19-GS08的Datasheet PDF文件第2页浏览型号BAS19-GS08的Datasheet PDF文件第3页 
BAS19–BAS21  
Vishay Telefunken  
Switching Diodes  
Features  
Silicon planar epitaxial high speed diode  
For switching and general purpose applications  
94 8550  
Order Instruction  
Type  
Type Differentiation  
Ordering Code  
BAS19–GS08  
BAS20–GS08  
BAS21–GS08  
Remarks  
BAS19  
BAS20  
BAS21  
V
RRM  
V
RRM  
V
RRM  
= 120 V  
= 200 V  
= 250 V  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
100  
150  
200  
120  
200  
250  
2.5  
Unit  
V
BAS19  
BAS20  
BAS21  
BAS19  
BAS20  
BAS21  
Working peak reverse voltage=  
DC Blocking voltage  
V
RWM  
=
V
R
Repetitive peak reverse voltage  
Peak forward surge current  
V
RRM  
V
A
t=1 s  
t=1s  
I
FSM  
0.5  
Repetitive peak forward current  
Average forward current  
Forward current  
I
625  
200  
400  
250  
mA  
mA  
mA  
mW  
FRM  
t <0.3ms  
I
FAV  
p
I
F
T
=T  
Case L  
(8 mm from Case)= T  
Power dissipation  
P
tot  
amb  
Junction and storage  
temperature range  
T =T  
–55...+150  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction to ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
www.vishay.com  
1 (3)  
Document Number 85540  
Rev. 2, 13-Feb-01  

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