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BAS19-G, BAS20-G, BAS21-G PDF预览

BAS19-G, BAS20-G, BAS21-G

更新时间: 2023-12-06 20:06:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 90K
描述
Small Signal Switching Diodes, High Voltage

BAS19-G, BAS20-G, BAS21-G 数据手册

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BAS19-G, BAS20-G, BAS21-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
FEATURES  
• Silicon epitaxial planar diode  
3
• Fast switching diode in case SOT-23, especially  
suited for automatic insertion  
• General purpose switching applications  
• High conductance  
1
2
• AEC-Q101 qualified available  
(part number on request)  
• Base P/N-G3 - green, commercial grade  
• Material categorization:  
for definitions of compliance please see  
DESIGN SUPPORT TOOLS click logo to get started  
www.vishay.com/doc?99912  
Models  
Available  
MECHANICAL DATA  
Case: SOT-23  
Weight: approx. 8.1 mg  
Packaging codes / options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
DIFFERENTIATION  
PART  
ORDERING CODE  
TYPE MARKING CIRCUIT CONFIGURATION  
REMARKS  
BAS19-G  
BAS20-G  
BAS21-G  
VR = 100 V  
VR = 150 V  
VR = 200 V  
BAS19-G3-08 or BAS19-G3-18  
BAS20-G3-08 or BAS20-G3-18  
BAS21-G3-08 or BAS21-G3-18  
A8G  
A9G  
AAG  
Single  
Single  
Single  
Tape and reel  
Tape and reel  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VALUE  
100  
150  
200  
120  
200  
250  
2.5  
UNIT  
BAS19-G  
BAS20-G  
BAS21-G  
BAS19-G  
BAS20-G  
BAS21-G  
VR  
V
V
V
V
V
V
Continuous reverse voltage  
VR  
VR  
VRRM  
VRRM  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak forward current  
t = 1 μs  
t = 1 s  
IFSM  
A
Non-repetitive peak forward surge current  
0.5  
Maximum average forward rectified current (1) (av. over any 20 ms period)  
DC forward current (2)  
IF(AV)  
IF  
200  
200  
625  
250  
mA  
mA  
mA  
mW  
Repetitive peak forward current  
Power dissipation (2)  
IFRM  
Ptot  
Notes  
(1)  
Measured under pulse conditions; pulse time = tp 0.3 ms  
Device on fiberglass substrate, see layout on next page  
(2)  
Rev. 1.3, 13-Feb-18  
Document Number: 83390  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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