Datasheet > BAS19

BAS19

更新时间： 2024-11-13 22:48:11

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关光电二极管
页数	文件大小	规格书
4页	108K
描述
Silicon Switching Diodes (High-speed, high-voltage switch)

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中文翻译

获取价格

数据手册
替代型号

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BAS19 数据手册

Silicon Switching Diodes

BAS 19

… BAS 21

● High-speed, high-voltage switch

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BAS 19

BAS 20

BAS 21

JPs

JRs

JSs

Q62702-A95

Q62702-A113

Q62702-A79

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

BAS 19

BAS 20

BAS 21

Reverse voltage

100

120

150

200

250

Peak reverse voltage

Forward current

200

250

Peak forward current

Total power dissipation, T

Junction temperature

625

= 70 ˚C Ptot

350

˚C

150

Storage temperature range

stg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 300

≤ 230

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

07.94

Semiconductor Group

12 3 4

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BAS19 替代型号

型号	品牌	替代类型	描述	数据表
BAS19LT1G	ONSEMI	功能相似	High Voltage Switching Diode

与BAS19相关器件

型号	品牌	获取价格	描述	数据表
BAS19, BAS20, BAS21	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAS19,215	NXP	获取价格	BAS19 - High-voltage switching diode TO-236 3-Pin
BAS19,235	NXP	获取价格	BAS19 - High-voltage switching diode TO-236 3-Pin
BAS19/E8	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, TO-236AB
BAS19/E9	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, TO-236AB
BAS19/T3	NXP	获取价格	DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
BAS19/T4	NXP	获取价格	DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
BAS19_	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAS19_06	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAS19_07	TSC	获取价格	Surface Mount Fast Switching Diode