Datasheet > BAS19

BAS19

更新时间： 2024-11-14 08:48:19

品牌	Logo	应用领域
SECOS		二极管开关光电二极管
页数	文件大小	规格书
2页	201K
描述
Surface Mount Switching Diode

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BAS19 数据手册

BAS19

Surface Mount Switching Diode

Elektronische Bauelemente

RoHS Compliant Product

FEATURES

A suffix of "-C" specifies halogen & lead-free

Fast Switching Speed

Surface Mount Package Ideally Suited for

Automatic Insertion

Top View

For General Purpose Switching Applications

High Conductance

CATHODE

ANODE

MAXIMUM RATINGS

Rating

Symbol

Value

120

Unit

Vdc

SOT-23

Min

Dim

Max

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

200

mAdc

500

FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

Derate above 25°C

T = 25°C

2.4

417

mW/°C

°C/W

°C

All Dimension in mm

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

BAS19 = JP

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

(V = 100 Vdc,TJ = 25^OC)

—

0.1

100

µAdc

(V = 100 Vdc, T = 150°C)

(V = 25 Vdc, T = 150°C)

Reverse Breakdown Voltage

(I = 100 µAdc)

120

—

Vdc

(BR)

Forward Voltage

(I = 1.0 mAdc)

—

715

855

1000

1250

(I = 10 mAdc)

(I = 100 mAdc)

(I = 200 mAdc)

Diode Capacitance

(V = 0, f = 1.0 MHz)

—

5.0

Reverse Recovery Time

(I = I = 30 mAdc, R = 100 Ω)

1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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