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BAS19 PDF预览

BAS19

更新时间: 2024-02-27 12:37:45
品牌 Logo 应用领域
EIC 二极管开关光电二极管高压
页数 文件大小 规格书
2页 82K
描述
HIGH VOLTAGE SWITCHING DIODES

BAS19 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6二极管类型:RECTIFIER DIODE
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS19 数据手册

 浏览型号BAS19的Datasheet PDF文件第2页 
Certificate TH97/10561QM  
Certificate TW00/17276EM  
HIGH VOLTAGE  
SWITCHING DIODES  
SOT-23  
BAS19,BAS20,BAS21  
PRV : 120 - 250 Volts  
IO : 200 mA  
1.40  
0.100  
0.013  
0.95  
0.50  
0.35  
FEATURES :  
3.10  
2.70  
* Small plastic SMD package  
* Switching speed: max. 50 ns  
* General application  
0.19  
0.08  
3
1
2
* Continuous reverse voltage: max. 100V, 150V, 200V  
* Repetitive peak reverse voltage: max. 120V, 200V, 250V  
* Pb / RoHS Free  
1.02  
0.89  
2.04  
1.78  
3
MECHANICAL DATA :  
* Case : SOT-23 plastic Case  
* BAS19 Marking Code: HA  
* BAS20 Marking Code: HB  
* BAS21 Marking Code: HC  
bottom view  
1
2
Dimensions in millimeters  
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta = 25 °C unless otherwise specified)  
Parameter  
Symbol BAS19 BAS20 BAS21  
Unit  
VRRM  
VR  
Maximum Repetitive Peak Reverse Voltage  
Maximum Continuous Reverse Voltage  
120  
100  
200  
150  
250  
200  
V
V
200  
IF  
Maximum Continuous Forward Current (Note 1)  
Maximum Non-repetitive Peak Forward Current  
(square wave; Tj = 25 °C prior to surge)  
mA  
9
t = 1 µs  
IFSM  
3
A
t = 100 µs  
t = 10 ms  
1.7  
250  
Ptot  
Rth j-tp  
Rth j-a  
TJ  
Total Power Dissipation (Note 1)  
Thermal Resistance Junction to Tie-point  
Thermal Resistance Junction to Ambient  
Junction Temperature Range  
mW  
K/W  
K/W  
°C  
330  
500  
150  
-65 to +150  
TSTG  
Storage Temperature Range  
°C  
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified.  
Test Condition  
IF = 100 mA  
Parameter  
Symbol BAS19 BAS20 BAS21  
Unit  
1.00  
Forward Voltage  
VF  
V
1.25  
IF = 200 mA  
100  
VR = VRmax  
Reverse Current  
nA  
µA  
pF  
IR  
100  
VR = VRmax, Tj = 150 °C  
VR = 0 V, f = 1 MHz  
IF = 30 mA to IR = 30mA,  
RL =100 ,measure at IR =3 mA  
5
CD  
Trr  
Capacitance  
Reverse Recovery Time  
50  
ns  
Note : (1) Device mounted on an FR4 printed circuit board.  
Page 1 of 2  
Rev. 01 : May 22, 2006  

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