Datasheet > BAS19

BAS19

更新时间： 2024-11-14 08:48:19

品牌	Logo	应用领域
EIC		二极管开关光电二极管高压
页数	文件大小	规格书
2页	82K
描述
HIGH VOLTAGE SWITCHING DIODES

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中文翻译

获取价格

数据手册

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BAS19 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

HIGH VOLTAGE

SWITCHING DIODES

SOT-23

BAS19,BAS20,BAS21

PRV : 120 - 250 Volts

I_O: 200 mA

1.40

0.100

0.013

0.95

0.50

0.35

FEATURES :

3.10

2.70

* Small plastic SMD package

* Switching speed: max. 50 ns

* General application

0.19

0.08

* Continuous reverse voltage: max. 100V, 150V, 200V

* Repetitive peak reverse voltage: max. 120V, 200V, 250V

* Pb / RoHS Free

1.02

0.89

2.04

1.78

MECHANICAL DATA :

* Case : SOT-23 plastic Case

* BAS19 Marking Code: HA

* BAS20 Marking Code: HB

* BAS21 Marking Code: HC

bottom view

Dimensions in millimeters

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta = 25 °C unless otherwise specified)

Parameter

Symbol BAS19 BAS20 BAS21

Unit

V_RRM

V_R

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

120

100

200

150

250

200

I_F

Maximum Continuous Forward Current (Note 1)

Maximum Non-repetitive Peak Forward Current

(square wave; Tj = 25 °C prior to surge)

t = 1 µs

I_FSM

t = 100 µs

t = 10 ms

1.7

250

P_tot

R_{th j-tp}

R_{th j-a}

T_J

Total Power Dissipation (Note 1)

Thermal Resistance Junction to Tie-point

Thermal Resistance Junction to Ambient

Junction Temperature Range

K/W

°C

330

500

150

-65 to +150

T_STG

Storage Temperature Range

°C

ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified.

Test Condition

I_F= 100 mA

Parameter

Symbol BAS19 BAS20 BAS21

Unit

1.00

Forward Voltage

V_F

1.25

I_F= 200 mA

100

V_R= V_Rmax

Reverse Current

µA

I_R

100

V_R= V_Rmax, Tj = 150 °C

V_R= 0 V, f = 1 MHz

I_F= 30 mA to I_R= 30mA,

R_L=100 Ω,measure at I_R=3 mA

C_D

Trr

Capacitance

Reverse Recovery Time

Note : (1) Device mounted on an FR4 printed circuit board.

Page 1 of 2

Rev. 01 : May 22, 2006

中文翻译

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