Datasheet > BAS16V

BAS16V

更新时间： 2024-11-18 08:48:19

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管开关光电二极管
页数	文件大小	规格书
2页	778K
描述
SWITCHING DIODE

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中文翻译

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BAS16V 数据手册

BAS16V

SWITCHING DIODE

SOT-563

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Marking: KAM

Maximum Ratings @T_A=25℃

Parameter

Symbol

Unit

Limits

Non-Repetitive Peak reverse voltage

V_RM

100

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

300

Forward Continuous Current

Average Rectified Output Current

Peak forward surge current @=1.0μs

@=1.0s

I_O

200

2.0

I_FSM

1.0

Power Dissipation

P_D

R_θJA

T_j

150

K/W

℃

Thermal Resistance Junction to Ambient

Junction temperature

833

150

Storage temperature

T_STG

-65~+150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_{(BR) R}

Test conditions

I_R= 100µA

MIN

MAX

UNIT

Reverse breakdown voltage

V_R=75V

V_R=20V

µA

Reverse voltage leakage current

Forward voltage

I_R

I_F=1mA

0.715

0.855

I_F=10mA

I_F=50mA

I_F=150mA

V_F

1.25

Diode capacitance

C_D

t_rr

V_R=0, f=1MHz

I_F=I_R=10mA,I_rr=0.1×I_R,

Reveres recovery time

R_L=100Ω

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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