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BAS16TH

更新时间： 2023-09-03 20:33:48

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安世 - NEXPERIA		/
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描述
High-speed switching diodeProduction

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BAS16TH 数据手册

BAS16TH

High-speed switching diode

7 December 2018

Product data sheet

1. General description

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 4 ns

•

Low leakage current

Repetitive peak reverse voltage V_RRM≤ 100 V

Low capacitance

Small SMD plastic package

High-temperature applications up to 175 °C

AEC-Q101 qualified

3. Applications

•

High-speed switching

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse T_j= 25 °C

voltage

100

I_F

forward current

reverse voltage

[1]

[2]

215

100

1.25

0.5

V_R

V_F

I_R

forward voltage

reverse current

I_F= 150 mA

V_R= 80 V; T_j= 25 °C

µA

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; R_L= 100 Ω;

I_R(meas)= 1 mA; T_amb= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.

[2] Pulsed test: t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...10

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