Datasheet > BAS16J-Q

BAS16J-Q

更新时间： 2024-11-19 11:13:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	185K
描述
High-speed switching diodeProduction

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BAS16J-Q 数据手册

BAS16J-Q

High-speed switching diode

17 September 2021

Product data sheet

1. General description

High-speed switching diode, encapsulated in a very small and flat lead SOD323F Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 4 ns

•

Low capacitance

Low leakage current

Reverse voltage: V_R≤ 100 V

Repetitive peak reverse voltage: V_RRM≤ 100 V

Small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

V_R

I_R

reverse voltage

reverse current

100

0.5

V_R= 80 V; T_amb= 25 °C

µA

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; R_L= 100 Ω;

I_R(meas)= 1 mA; T_amb= 25 °C

12 3 4 5 6 7...10

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