BAS16HT1G

更新时间： 2024-02-27 11:50:48

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管开关光电二极管
页数	文件大小	规格书
4页	45K
描述
Switching Diode

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技术参数
数据手册

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BAS16HT1G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.75
Base Number Matches：	1

BAS16HT1G 数据手册

BAS16HT1

Preferred Device

Switching Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

http://onsemi.com

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

200

500

mAdc

FM(surge)

CATHODE

ANODE

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

SOD−323

Total Device Dissipation FR-5 Board (Note 1)

200

CASE 477

STYLE 1

T = 25°C

Derate above 25°C

1.57

635

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

MARKING DIAGRAM

T , T

−55 to

150

stg

1. FR-4 Minimum Pad.

A6 M

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

Symbol

Min

Max

Unit

A6 = Specific Device Code

= Date Code

µAdc

(V = 75 Vdc)

−

1.0

(V = 75 Vdc, T = 150°C)

ORDERING INFORMATION

(V = 25 Vdc, T = 150°C)

Device

Package

Shipping†

Reverse Breakdown Voltage

(I = 100 µAdc)

−

Vdc

(BR)

BAS16HT1

SOD−323

3000/Tape & Reel

Forward Voltage

BAS16HT1G

SOD−323

(Pb−Free)

(I = 1.0 mAdc)

−

715

855

1000

1250

(I = 10 mAdc)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(I = 50 mAdc)

(I = 150 mAdc)

Diode Capacitance

(V = 0, f = 1.0 MHz)

−

2.0

1.75

6.0

Vdc

Preferred devices are recommended choices for future use

and best overall value.

Forward Recovery Voltage

(I = 10 mAdc, t = 20 ns)

Reverse Recovery Time

(I = I = 10 mAdc, R = 50 Ω)

Stored Charge

(I = 10 mAdc to V = 5.0 Vdc,

R = 500 Ω)

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

March, 2005 − Rev. 4

BAS16HT1/D

12 3 4

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