BAS16HT1D

更新时间： 2024-11-17 22:20:35

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
4页	45K
描述
Switching Diode

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中文翻译

获取价格

数据手册

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BAS16HT1D 数据手册

BAS16HT1

Preferred Device

Switching Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

http://onsemi.com

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

200

500

mAdc

FM(surge)

CATHODE

ANODE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board (Note 1)

200

T = 25°C

Derate above 25°C

1.57

635

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

SOD−323

CASE 477

STYLE 1

T , T

−55 to

150

stg

1. FR-4 Minimum Pad.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Characteristic

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

Symbol

Min

Max

Unit

A6 M

µAdc

(V = 75 Vdc)

−

1.0

(V = 75 Vdc, T = 150°C)

A6 = Specific Device Code

(V = 25 Vdc, T = 150°C)

= Date Code

Reverse Breakdown Voltage

(I = 100 µAdc)

−

Vdc

(BR)

ORDERING INFORMATION

Forward Voltage

(I = 1.0 mAdc)

−

715

855

1000

1250

Device

BAS16HT1

Package

Shipping†

(I = 10 mAdc)

(I = 50 mAdc)

SOD−323 3000/Tape & Reel

(I = 150 mAdc)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Diode Capacitance

(V = 0, f = 1.0 MHz)

−

2.0

1.75

6.0

Vdc

Forward Recovery Voltage

(I = 10 mAdc, t = 20 ns)

Preferred devices are recommended choices for future use

and best overall value.

Reverse Recovery Time

(I = I = 10 mAdc, R = 50 Ω)

Stored Charge

(I = 10 mAdc to V = 5.0 Vdc,

R = 500 Ω)

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

February, 2004 − Rev. 3

BAS16HT1/D

12 3 4

中文翻译

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