Datasheet > BAS16HT1/D

BAS16HT1/D

更新时间： 2024-11-19 23:34:31

品牌	Logo	应用领域
其他 - ETC		二极管开关
页数	文件大小	规格书
4页	45K
描述
Switching Diode

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中文翻译

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数据手册

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BAS16HT1/D 数据手册

ON Semiconductort

Switching Diode

BAS16HT1

ON Semiconductor Preferred Device

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

200

500

mAdc

FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 477–02, STYLE 1

SOD323

Total Device Dissipation FR-5 Board,*

200

T = 25°C

Derate above 25°C

1.57

635

150

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

T , T

J stg

CATHODE

ANODE

**FR-4 Minimum Pad

DEVICE MARKING

BAS16HT1 = A6

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

µAdc

(V = 75 Vdc)

—

1.0

(V = 75 Vdc, T = 150°C)

(V = 25 Vdc, T = 150°C)

Reverse Breakdown Voltage

(I = 100 µAdc)

—

Vdc

(BR)

Forward Voltage

(I = 1.0 mAdc)

—

715

855

1000

1250

(I = 10 mAdc)

(I = 50 mAdc)

(I = 150 mAdc)

Diode Capacitance

(V = 0, f = 1.0 MHz)

—

2.0

1.75

6.0

Vdc

Forward Recovery Voltage

(I = 10 mAdc, t = 20 ns)

Reverse Recovery Time

(I = I = 10 mAdc, R = 50 Ω)

Stored Charge

(I = 10 mAdc to V = 5.0 Vdc, R = 500 Ω)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 1

BAS16HT1/D

12 3 4

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