Datasheet > BAS16HT1

BAS16HT1

更新时间： 2024-02-25 05:03:11

品牌	Logo	应用领域
乐山 - LRC		二极管开关光电二极管
页数	文件大小	规格书
2页	53K
描述
Switching Diode

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技术参数
数据手册

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BAS16HT1 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.75
Base Number Matches：	1

BAS16HT1 数据手册

LESHAN RADIO COMPANY, LTD.

Switching Diode

BAS16HT1

CATHODE

ANODE

MAXIMUMRATINGS

Rating

Symbol

V R

Value

Unit

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

Vdc

CASE 477– 02, STYLE 1

I F

200

500

mAdc

SOD– 323

I FM(surge)

mAdc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,*

T A = 25°C

P D

200

Derate above 25°C

1.57

635

150

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

R θJA

Junction and Storage Temperature

T J , T stg

**FR-4 Minimum Pad

DEVICEMARKING

BAS16HT1 = A6

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFFCHARACTERISTICS

Reverse Voltage Leakage Current

I R

µAdc

—

1.0

(V R = 75 Vdc)

(V R = 75 Vdc, T J = 150°C)

(V R = 25 Vdc, T J = 150°C)

Reverse Breakdown Voltage

V (BR)

V F

—

Vdc

(I BR = 100 µAdc)

Forward Voltage

(I F = 1.0 mAdc)

(I F = 10 mAdc)

—

715

855

1000

1250

(I F = 50 mAdc)

(I F = 150 mAdc)

Diode Capacitance

(V R = 0, f = 1.0 MHz)

C D

—

2.0

1.75

6.0

Vdc

Forward Recovery Voltage

(I F = 10 mAdc, t r = 20 ns)

Reverse Recovery Time

V FR

t rr

(I F = I R = 10 mAdc, R L = 50 Ω)

Stored Charge

Q S

—

(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)

S7–1/2

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