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BAS16H-Q PDF预览

BAS16H-Q

更新时间: 2024-11-19 11:11:55
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
10页 185K
描述
High-speed switching diodeProduction

BAS16H-Q 数据手册

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BAS16H-Q  
High-speed switching diode  
17 September 2021  
Product data sheet  
1. General description  
High-speed switching diode, encapsulated in a small and flat lead SOD123F Surface-Mounted  
Device (SMD) plastic package.  
2. Features and benefits  
High switching speed: trr ≤ 4 ns  
Low capacitance  
Low leakage current  
Reverse voltage: VR ≤ 100 V  
Repetitive peak reverse voltage: VRRM ≤ 100 V  
Small SMD plastic package  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
High-speed switching  
General-purpose switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
VR  
IR  
reverse voltage  
reverse current  
-
-
-
-
-
-
100  
0.5  
4
V
VR = 80 V; Tamb = 25 °C  
µA  
ns  
trr  
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;  
IR(meas) = 1 mA; Tamb = 25 °C  
 
 
 
 

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