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BAS16DW PDF预览

BAS16DW

更新时间: 2024-11-27 01:20:59
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德欧泰克 - DIOTEC /
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SMD Small Signal Diode Arrays

BAS16DW 数据手册

 浏览型号BAS16DW的Datasheet PDF文件第2页 
BAS16DW, BAV70DW, BAV756DW, MMBD4448SDW  
BAS16DW, BAV70DW, BAV756DW, MMBD4448SDW  
IFAV = 150 mA  
VF1 < 0.715 V  
Tjmax = 150°C  
VRRM = 75 V  
IFSM1 = 2 A  
SMD Small Signal Diode Arrays  
SMD Kleinsignal-Dioden-Arrays  
trr  
< 4 ns  
Version 2018-08-30  
Typical Applications  
Typische Anwendungen  
Signal processing, High-speed  
Switching, Rectifying  
Signalverarbeitung, Schnelles Schalten,  
Gleichrichten  
SOT-363  
Commercial grade  
Standardausführung  
Suffix -Q: AEC-Q101 compliant 1)  
Suffix -Q: AEC-Q101 konform 1)  
Suffix -AQ: in AEC-Q101 qualification 1) Suffix -AQ: in AEC-Q101 Qualifikation 1)  
2±0.1  
2 x 0.65  
0.9±0.1  
Features  
Besonderheiten  
Sehr niedriges trr, Cj und IR  
Konform zu RoHS, REACH,  
Konfliktmineralien 1)  
5
4
6
Very low trr, Cj and IR  
Compliant to RoHS, REACH,  
Conflict Minerals 1)  
R
Type  
Code  
V
Mechanical Data 1)  
Mechanische Daten 1)  
1
2
3
Taped and reeled  
3000 / 7“  
0.01 g  
Gegurtet auf Rolle  
2.4  
Weight approx.  
Gewicht ca.  
Dimensions - Maße [mm]  
Case material  
UL 94V-0  
260°C/10s  
MSL = 1  
Gehäusematerial  
Solder & assembly conditions  
Löt- und Einbaubedingungen  
BAS16DW/-AQ  
BAV70DW  
6
5
4
6
5
4
3
Type  
Code  
KW  
2 x 2  
Common  
Cathode  
Type  
Code  
A4  
Single  
Diodes  
1
2
3
1
2
3
1, 2, 3 = A 4, 5, 6 = C  
1 = A1, 2 = A2, 3 = C3/C4  
4 = A3, 5 = A4, 6 = C1/C2  
BAV756DW  
MMBD4448SDW  
5
5
6
4
6
4
2 x 2  
4 in  
Type  
Code  
B7  
Type  
Code  
KB  
Common  
Cathode/  
Anode  
Bridge  
Config-  
uration  
1
2
3
1
2
3
1 = A1, 2 = C2, 3 = A2/A3  
4 = C3, 5 = A4, 6 = C1/C4  
1 = A1, 2 = C1, 3 = AC2  
4 = A2, 5 = C2, 6 = AC1  
Maximum ratings 2)  
Grenzwerte 2)  
200 mW 3)  
150 mA 3)  
Power dissipation (per device) − Verlustleistung (pro Bauteil)  
Maximum average forward current – Dauergrenzstrom  
Repetitive peak forward current – Periodischer Spitzenstrom  
Ptot  
IFAV  
IFRM  
300 mA 3)  
Peak forward surge current  
Stoßstrom in Fluss-Richtung  
tp ≤ 1 s  
IFSM  
0.5 A  
2 A  
tp ≤ 1 µs  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
MMBD4448SDW, BAS16DW/-AQ  
BAV756DW  
75 V  
90 V  
VRRM  
BAV70DW  
100 V  
Junction/ Storage temperature – Sperrschicht-/Lagerungstemperatur  
Tj/S  
-55…+150°C  
1
Please note the detailed information on our website or at the beginning of the data book  
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches  
2
3
TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben  
Mounted on 3 mm2 copper pads per terminal – Montage auf 3 mm2 Kupferbelag (Lötpads) je Anschluss  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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