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BAS16

更新时间： 2024-11-18 22:48:11

品牌	Logo	应用领域
捷特科 - ZETEX		二极管开关光电二极管
页数	文件大小	规格书
2页	100K
描述
PNP SILICON HIGH SPEED SWITCHING DIODE

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BAS16 数据手册

SOT23 PNP SILICON HIGH

BAS16

SPEED SWITCHING DIODE

ISSUE 3 FEBRUARY 1996

PIN CONFIGURATION

PARTMARKING DETAILS

BAS16 A6

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_R

VALUE

UNIT

Continuous Reverse Voltage

Repetative Reverse Voltage

V_RRM

I_FRM

Repetative Peak Forward Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

250

330

°C

P_tot

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Forward Voltage

V_F

715

855

1000

1250

I_F=1mA

I_F=10mA

I_F=50mA

I_F=150mA

Reverse Current

I_R

V_R=25V, T_j=150°C

V_R=75V

V_R=75V, T_j=150°C

Forward Recovery

Voltage

V_FR

1.75

Switched to

IF=10mA, t_r=20ns

Diode Capacitance

C_d

f=1MHz, V_R=0

Reverse Recovery Time t_rr

I_F=10mA, I_RM=10mA

R_L=100Ω, I_rr=1mA

(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage

limited to 275V

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