Datasheet > BAR81W

BAR81W

更新时间： 2024-11-09 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管开关测试光电二极管
页数	文件大小	规格书
1页	61K
描述
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss

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Product specification

BAR81W

SOT-343

Unit: mm

Features

Design for use in shunt configuration

High shunt signal isolation

Low shunt insertion loss

Absolute Maximum Ratings Ta = 25

Parameter

Diode reverse voltage

Symbol

V^R

Value

Unit

Forward current

I^F

100

150

P^tot

Total power dissipation, T^S= 103

Junction temperature

Operating temperature range

Storage temperature range

T^op

-55 to + 125

-55 to + 150

200

T^stg

R^{th JA}

R^{th JS}

K/W

Junction - ambient

Junction - soldering point

Note

120

1.Package mounted on alumina 15mm 16.7mm 0.7mm

Electrical Characteristics Ta = 25

Parameter

Reverse current

Symbol

I^R

Test Condition

V^R= 20 V

Min

Typ

Max

Unit

Forward voltage

V^F

IF = 100 mA

0.93

0.6

VR = 1 V, f = 1 MHz

V^R= 3 V, f = 1 MHz

Diode capacitance

C^T

0.57

0.7

Forward resistance

Series inductance

I^F= 5 mA, f = 100 MHz

t^rr

0.15

Marking

BBs

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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