Datasheet > BAR65V-02V

BAR65V-02V

更新时间： 2024-11-05 12:53:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	55K
描述
Space saving SOD523 package with low series inductance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAR65V-02V 数据手册

Product specification

BAR65V-02V

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

Space saving SOD523 package with low series inductance

Very small reverse capacitance

Small reverse capacitance

+0.1

-0.1

1.6

0.77max

Absolute Maxim um Ratings Ta = 25

Param eter

Reverse voltage

Sym bol

V^R

Value

Unit

Forward current

I^F

100

m A

Junction tem perature

Storage tem perature

Junction soldering point

T^j

150

T^stg

R^thJS

-55 to +150

100

K/W

Electrical Characteristics Ta = 25

Parameter

Reverse voltage

Symbol

V^R

Test Condition

Min

Typ

Max

Unit

I^R= 10

Reverse current

Forward voltage

I^R

V^R= 20 V

I^F= 100 mA

V^F

1.1

f = 1 MHz, V^R= 0

0.65

0.55

0.50

Diode capacitance

C^D

f = 1 MHz, V^R= 1 V

f = 1 MHz, VR = 3 V

f = 100 MHz, I^F= 1 mA

f = 100 MHz, I^F= 5 mA

f = 100 MHz, I^F= 10 mA

I^F= 10 mA, I^R= 6 mA, i^R= 3 mA

0.9

0.8

Forward resistance

r^f

0.6

0.95

0.9

0.52

150

Charge carrier life time

t^rr

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与BAR65V-02V相关器件

型号	品牌	获取价格	描述	数据表
BAR65V-02V-GS08	VISHAY	获取价格	RF PIN Diode
BAR66	INFINEON	获取价格	Silicon PIN Diode Array (Surge protection device Two PIN diodes, series configuration)
BAR66	KEXIN	获取价格	Silicon PIN Diode Array
BAR66	TYSEMI	获取价格	Surge protection device Designed for surge overvoltage clamping in antiparallel connection
BAR66_07	INFINEON	获取价格	Silicon PIN Diode Array
BAR66E6327	INFINEON	获取价格	Pin Diode, 150V V(BR), Silicon,
BAR67	INFINEON	获取价格	Silicon PIN Diode
BAR67_07	INFINEON	获取价格	Silicon PIN Diode
BAR67-02V	INFINEON	获取价格	Silicon PIN Diode
BAR67-02V-E6327	INFINEON	获取价格	Pin Diode, 150V V(BR),