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BAR64V-05W-V PDF预览

BAR64V-05W-V

更新时间: 2024-09-17 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 121K
描述
RF PIN Diodes - Dual, Common Cathode in SOT323

BAR64V-05W-V 数据手册

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BAR64V-05W-V  
Vishay Semiconductors  
RF PIN Diodes - Dual, Common Cathode in SOT323  
Description  
Characterized by low reverse Capacitance the PIN  
Diodes BAR64V-05W-V was designed for RF signal  
switching and tuning. As a function of the forward  
bias current the forward resistance (RF) can be  
adjusted over a wide range. A long carrier life time  
offers low signal distortion for signals over 10 MHz up  
to 3 GHz. Typical applications for these PIN Diodes  
are switches and attenuators in wireless, mobile and  
TV-systems.  
2
3
1
1
2
18380  
3
Features  
Mechanical Data  
• High voltage current controlled RF resistor  
Case: SOT323 plastic case  
Weight: approx. 6.0 mg  
Packaging Codes/Options:  
• Small diode capacitance  
• Low series inductance  
e3  
• Low forward resistance  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/3 k per 7" reel (8 mm tape), 15 k/box  
• Improved performance due to two seperated dice  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
• For frequencies up to 3 GHz  
• RF-signal tuning  
• Signal attenuator and switches  
• Mobile, wireless and TV-Applications  
Parts Table  
Part  
Ordering code  
Marking  
DW5  
Remarks  
BAR64V-05W-V  
BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08  
Tape and reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VR  
Value  
Unit  
V
Reverse voltage  
100  
100  
IF  
Forward current  
mA  
°C  
Tj  
Junction temperature  
Storage temperature range  
150  
Tstg  
- 55 to + 150  
°C  
Document Number 81836  
Rev. 1.1, 25-Feb-08  
www.vishay.com  
For technical support, please contact: Diodes-SSP@vishay.com  
1

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