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BAR64V-04W PDF预览

BAR64V-04W

更新时间: 2024-09-17 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 121K
描述
RF PIN Diodes - Dual, Series in SOT-323

BAR64V-04W 数据手册

 浏览型号BAR64V-04W的Datasheet PDF文件第2页浏览型号BAR64V-04W的Datasheet PDF文件第3页浏览型号BAR64V-04W的Datasheet PDF文件第4页浏览型号BAR64V-04W的Datasheet PDF文件第5页 
BAR64V-04W  
Vishay Semiconductors  
RF PIN Diodes - Dual, Series in SOT-323  
Description  
Characterized by low reverse Capacitance the PIN  
Diodes BAR64V-04W was designed for RF signal  
switching and tuning. As a function of the forward  
bias current the forward resistance (rf) can be  
adjusted over a wide range. A long carrier life time  
2
3
1
1
2
18379  
offers low signal distortion for signals over 10 MHz up  
3
to 3 GHz. Typical applications for this PIN Diodes are  
switches and attenuators in wireless, mobile and TV-  
systems.  
Features  
Mechanical Data  
• High reverse Voltage  
• Small reverse capacitance  
• High breakdown voltage  
• Lead (Pb)-free component  
Case: SOT-323 Plastic case  
Weight: approx. 6.0 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
e3  
• Component in accordance to  
RoHS 2002/95/EC and WEEE 2002/96/EC  
Applications  
For frequency up to 3 GHz  
RF-signal tuning  
Signal attenuator and switches  
Mobile, wireless and TV-Applications  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
Tape and Reel  
BAR64V-04W  
BAR64V-04W-GS18 or BAR64V-04W-GS08  
DW4  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
Unit  
V
100  
100  
Forward current  
IF  
Tj  
mA  
°C  
Junction temperature  
Storage temperature range  
150  
Tstg  
- 55 to + 150  
°C  
Document Number 85646  
Rev. 1.2, 15-Apr-05  
www.vishay.com  
1

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