Datasheet > BAR43S

BAR43S

更新时间： 2024-11-16 18:04:51

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描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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BAR43S 数据手册

SMD Type

Diodes

Transistors

Schottky Diodes

BAR43/A/C/S(KAR43/A/C/S)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Ƶ Features

ƽ Low forward voltage

ƽ Fast switching

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

BAR43

BAR43A

BAR43C

BAR43S

Ƶ Absolute Maximum Ratings

Parameter

Repetitive Peak Reverse Voltage

Continuous Forward Current

Symbol

Rating

Unit

RRM

100

Surge Non-repetitive Forward Current

tp=10ms Sinusoidal

IFSM

750

tot

250

400

125

Power Dissipation Ta=25ć (Note1)

ć/W

Thermal Resistance Junction to Ambient (Note2)

Junction Temperature

șJA

Storage Temperature range

Notes:

Tstg

-55 to 150

1.For double diodes, Ptot is the total power dissipation of both diodes.

2.Mounted on epoxy board with recommended pad layout.

Ƶ Electrical Characteristics (T = 25ć unless otherwise specified)

Parameter

Symbol

Test Conditions

R= 100 ȝA

Min

Typ

Max Unit

Reverse breakdown voltage

= 2 mA

0.33

Forward voltage *

= 15 mA

= 100 mA

0.45

500

100

ȝA

=25 V, T

= 25ć

Reverse voltage leakage current **

=25 V, T

= 100ć

Capacitance between terminals

Reverse recovery time

= 1 V, F = 1 MHz

=10mA,

=100ȍ

= 50Kȍ, C = 300pF,

F = 45Mhz, V = 2V

=10mA, I

rr = 1mA, R

Detection efficiency.

Pulse test: *tp=380ȝs,į<2%

**tp=5ms,į<2%

Ƶ Marking

Type

BAR43

D95

BAR43A

DB1

BAR43C

DB2

BAR43S

Marking

DA5

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中文翻译

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