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BAR43CS62Z PDF预览

BAR43CS62Z

更新时间: 2024-11-15 21:17:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon

BAR43CS62Z 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.64
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.29 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAR43CS62Z 数据手册

 浏览型号BAR43CS62Z的Datasheet PDF文件第2页 
BAR43/A/C/S  
Connection Diagrams  
3
3
3
BAR43A  
BAR43  
3
D95  
1
1
2NC  
1
1
2
2
3
3
2
BAR43C  
BAR43S  
1
MARKING  
BAR43 D95 BAR43A DB1  
BAR43C DB2 BAR43S DA5  
SOT-23  
1
2
2
Schottky Diodes  
Absolute Maximum Ratings* TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
30  
V
Average Rectified Forward Current  
200  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
750  
mA  
Storage Temperature Range  
-55 to +150  
°C  
Tstg  
TJ  
Operating Junction Temperature  
150  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
**Mounted on ceramic substrate 10mm x 8mm x 0.6mm.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
290  
430  
mW  
RθJA  
°C/W  
Electrical Characteristics TA = 25°C unless otherwise noted  
Test Conditions  
Min  
Symbol  
Parameter  
Max  
Units  
VR  
VF  
Breakdown Voltage  
V
30  
I = 100  
A
µ
R
Forward Voltage  
IF = 2.0 mA  
IF = 15 mA  
IF = 100 mA  
VR = 25 V  
260  
330  
450  
1.0  
0.5  
100  
mV  
mV  
V
IR  
trr  
Reverse Current  
µA  
V = 25 V, T = 100 C  
°
µ
A
R
A
Reverse Recovery Time  
IF = IR = 10 mA, IRR = 1.0 mA,  
R = 100  
5.0  
ns  
L
Minimum Detection Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,  
80%  
RL = 100 Ω  
BAR43, Rev. B  
2001 Fairchild Semiconductor Corporation  

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