BAR28

更新时间： 2024-11-14 22:27:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		小信号肖特基二极管
页数	文件大小	规格书
3页	63K
描述
SMALL SIGNAL SCHOTTKY DIODE

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中文翻译

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数据手册
替代型号

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BAR28 数据手册

BAR 28

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION

Metal to silicon junction diode featuring high break-

down, low turn-on voltage and ultrafast switching.

Primarlyintended forhigh level UHF/VHF detection

and pulse application with broad dynamic range.

Matched batches are available on request.

DO 35

(Glass)

ABSOLUTE RATINGS (limiting values)

Symbol

V_RRM

I_F

Parameter

Repetitive Peak Reverse Voltage

Value

Unit

Forward Continuous Current*

°C

T_a= 25 °C

t_p≤ 1s

I_FSM

Surge non Repetitive Forward Current*

Storage and Junction Temperature Range

T_stg

T_j

- 65 to 200

T_L

Maximum Lead Temperature for Soldering during 10s at 4mm

from Case

230

°C

THERMAL RESISTANCE

Symbol

Test Conditions

Value

Unit

R_th(j-a)

Junction-ambient*

400

°C/W

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Symbol

V_BR

Test Conditions

Min.

Typ.

Max.

Unit

T_amb= 25°C

I_R= 10µA

I_F= 1mA

I_F= 15mA

V_R= 50V

V_F* *

0.41

_amb= 25°C

I_R* *

0.2

T_amb= 25°C

µA

DYNAMIC CHARACTERISTICS

Symbol

Test Conditions

V_R= 0V

Min.

Typ.

Max.

Unit

_amb= 25°C

f = 1MHz

100

T_amb= 25°C

I_F= 5mA

Krakauer Method

* On infinite heatsink with 4mm lead length

** Pulse test: t_p≤ 300µs δ < 2%.

Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.

November 1994

1/3

12 3

中文翻译

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BAR28 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV1N5711-1	MICROSEMI	类似代替	Schottky Barrier Diode Qualified per MIL-PRF-19500/444
JAN1N5711-1	MICROSEMI	类似代替	Schottky Barrier Diode Qualified per MIL-PRF-19500/444
JANTX1N5711-1	MICROSEMI	功能相似	Schottky Barrier Diode Qualified per MIL-PRF-19500/444

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