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BAP64-04 PDF预览

BAP64-04

更新时间: 2024-09-15 12:33:11
品牌 Logo 应用领域
TYSEMI 射频衰减器二极管开关
页数 文件大小 规格书
1页 61K
描述
High voltage, current controlled RF resistor for RF attenuators and switches

BAP64-04 数据手册

  
Product specification  
BAP64-04  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
Features  
3
High voltage, current controlled  
RF resistor for RF attenuators and switches  
Low diode capacitance  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
Low diode forward resistance  
Low series inductance  
1.9  
For applications up to 3 GHz.  
Absolute Maximum Ratings Ta = 25  
Parameter  
continuous reverse voltage  
continuous forward current  
Symbol  
VR  
Min  
Max  
175  
Unit  
V
IF  
100  
mA  
mW  
Ptot  
Tstg  
Tj  
250  
total power dissipation  
storage temperature  
junction temperature  
Ts = 90  
-65  
-65  
+150  
+150  
220  
thermal resistance from junction to soldering point  
Rth j-s  
K/W  
Electrical Characteristics Ta = 25  
Parameter  
forward voltage  
Symbol  
VF  
Conditions  
IF = 50 mA  
Min  
Typ  
Max  
1.1  
10  
Unit  
V
0.95  
VR = 175 V  
reverse leakage current  
VR  
A
VR = 20 V  
1
VR = 0; f = 1 MHz  
0.52  
0.37  
0.23  
20  
pF  
pF  
pF  
diode capacitance  
Cd  
VR = 1 V; f = 1 MHz  
0.5  
0.35  
40  
VR = 20 V; f = 1 MHz  
IF = 0.5 mA; f = 100 MHz; note 1  
IF = 1 mA; f = 100 MHz; note 1  
IF = 10 mA; f = 100 MHz; note 1  
IF = 100 mA; f = 100 MHz; note 1  
when switched from IF = 10 mA to  
10  
20  
diode forward resistance  
charge carrier life time  
rD  
2
3.8  
1.35  
0.7  
1.55  
1.4  
S
L
IR = 6mA; RL = 100 ,measured at IR = 3 mA  
series inductance  
Note  
LS  
nH  
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.  
Marking  
Marking  
4Kp  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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