Datasheet > BAP64-02

BAP64-02

更新时间： 2024-09-13 12:53:47

品牌	Logo	应用领域
TYSEMI		射频衰减器二极管开关测试
页数	文件大小	规格书
1页	58K
描述
High voltage, current controlled RF resistor for RF attenuators and switches

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中文翻译

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数据手册

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BAP64-02 数据手册

Product specification

BAP64-02

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

High voltage, current controlled

RF resistor for RF attenuators and switches

Low diode capacitance

+0.1

-0.1

1.6

0.77max

Low diode forward resistance

Very low series inductance

For applications up to 3 GHz.

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

continuous forward current

Symbol

V^R

Min

Max

175

100

715

+150

Unit

I^F

P^tot

T^stg

T^j

total power dissipation

storage temperature

junction temperature

Ts = 90

-65

thermal resistance from junction to soldering point

R^{th j-s}

K/W

Electrical Characteristics Ta = 25

Parameter

forward voltage

Symbol

V^F

Conditions

I^F= 50 mA

Min

Typ

Max

1.1

Unit

0.95

V^R=175 V

reverse leakage current

I^R

V^R=20 V

V^R= 0; f = 1 MHz

V^R= 1 V; f = 1 MHz

V^R= 20 V; f = 1 MHz

0.48

0.35

0.23

diode capacitance

C^d

0.35

I^F= 0.5 mA; f = 100 MHz; note 1

I^F= 1 mA; f = 100 MHz; note 1

diode forward resistance

charge carrier life time

r^D

I^F= 10 mA; f = 100 MHz; note 1

3.8

1.35

I^F= 100 mA; f = 100 MHz; note 1

when switched from I^F= 10 mA to I^R= 6 mA;

RL = 100 ,measured at IR = 3 mA

0.7

1.55

0.6

series inductance

Note

L^S

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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