Datasheet > BAP63-02

BAP63-02

更新时间： 2024-09-13 12:33:11

品牌	Logo	应用领域
TYSEMI		二极管开关射频
页数	文件大小	规格书
2页	89K
描述
High speed switching for RF signals Low diode capacitance Low diode forward resistance

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中文翻译

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BAP63-02 数据手册

Product specification

BAP63-02

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

High speed switching for RF signals

Low diode capacitance

+0.1

-0.1

1.6

0.77max

Low diode forward resistance

Very low series inductance.

For applications up to 3 GHz.

Absolute M axim um Ratings Ta = 25

Param eter

continuous reverse voltage

continuous forward current

Sym bol

V^R

M in

M ax

Unit

I^F

100

715

+150

m A

m W

P^tot

T^stg

T^j

total power dissipation

storage tem perature

junction tem perature

T^S

-65

therm al resistance from junction to soldering point

R^{th j-s}

K/W

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

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