Datasheet > BAP51-02

BAP51-02

更新时间： 2024-01-17 23:23:56

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
1页	57K
描述
Low diode capacitance Low diode forward resistance.continuous reverse voltage VR 50 V

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BAP51-02 数据手册

Product specification

BAP51-02

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

Low diode capacitance

Low diode forward resistance.

+0.1

-0.1

1.6

0.77max

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

continuous forward current

Symbol

V^R

Min

Max

Unit

I^F

P^tot

715

+150

total power dissipation

storage temperature

junction temperature

Ts = 90

Tstg

-65

thermal resistance from junction to soldering point

Rth j-s

K/W

Electrical Characteristics Ta = 25

Parameter

forward voltage

Symbol

V^F

Conditions

I^F= 50 mA

Min

Typ

Max

1.1

Unit

0.95

reverse voltage

reverse current

V^R

I^R= 10

I^R

V^R= 50 V

100

V^R= 0; f = 1 MHz

0.4

0.3

0.2

5.5

3.6

1.5

diode capacitance

C^d

V^R= 1 V; f = 1 MHz

V^R= 5 V; f = 1 MHz

0.55

0.35

I^F= 0.5 mA; f = 100 MHz; note 1

IF = 1 mA; f = 100 MHz; note 1

I^F= 10 mA; f = 100 MHz; note 1

diode forward resistance

Note

6.5

2.5

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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