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BAL99/E8 PDF预览

BAL99/E8

更新时间: 2024-01-02 07:54:44
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管
页数 文件大小 规格书
2页 54K
描述
Rectifier Diode, 1 Element, 0.25A, 70V V(RRM), Silicon, TO-236AB

BAL99/E8 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.06
其他特性:FAST SWITCHING配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
最大非重复峰值正向电流:2 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:0.006 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAL99/E8 数据手册

 浏览型号BAL99/E8的Datasheet PDF文件第2页 
BAL99, BAV99  
Small-Signal Diodes  
TO-236AB (SOT-23)  
Mounting Pad Layout  
.122 (3.1)  
.110 (2.8)  
0.037 (0.95)  
0.037 (0.95)  
.016 (0.4)  
Top View  
3
0.079 (2.0)  
1
2
0.035 (0.9)  
.037(0.95)  
.037(0.95)  
0.031 (0.8)  
Features  
Silicon Epitaxial Planar Diode  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Fast switching diodes, especially suited for  
automatic insertion  
Dimensions in inches and (millimeters)  
This diode is also available in other configurations  
including a dual common anode with type  
designation BAW56  
Top View  
Mechanical Data  
Top View  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
BAL99  
Marking: JF  
BAV99  
Marking: JE  
Packaging Codes/Options:  
E8/10K per 13reel (8mm tape), 30K/box  
E9/3K per 7reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VR, VRM  
IF  
Value  
Unit  
V
Reverse Voltage, Peak Reverse Voltage  
Forward Current (continuous)  
70  
250  
mA  
Non-Repetitive Peak Forward Current  
at t = 1µs  
at t = 1ms  
at t = 1s  
IFSM  
IFSM  
IFSM  
2
1
A
A
A
.
0 5  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
RθJA  
Tj  
350(1)  
430(1)  
mW  
°C/W  
°C  
150  
Storage Temperature Range  
TS  
–65 to +150  
°C  
Note:  
(1) Device on Fiberglass Substrate, see layout on second page  
5/16/00  

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