Datasheet > BA891

BA891

更新时间： 2024-11-23 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
2页	84K
描述
Very small plastic SMD package Low diode capacitance:max. 1.05 pF Small inductance.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BA891 数据手册

Product specification

BA891

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

Very small plastic SMD package

Low diode capacitance:max. 1.05 pF

Low diode forward resistance:max. 0.7

Small inductance.

+0.1

-0.1

1.6

0.77max

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Total power dissipation

Storage temperature

Symbol

Conditions

Ts = 90

Min

Max

Unit

100

715

+150

Ptot

Tstg

-65

Junction temperature

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

Conditions

IF = 10 mA

VR = 30 V

Typ

Max

Unit

Reverse current

f = 1 MHz; note 1

VR = 1 V

Diode capacitance

0.8

1.05

0.9

VR = 3 V

0.65

f = 100 MHz; note 1

IF = 3 mA

Diode forward resistance

0.45

0.36

0.6

0.7

0.5

IF =10 mA

Series inductance

Note

1.Guaranteed on AQL basis; inspection level S4, AQL 1.0.

Marking

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与BA891相关器件

型号	品牌	获取价格	描述	数据表
BA891,115	NXP	获取价格	BA891 - Band-switching diode SOD 2-Pin
BA892	NXP	获取价格	Band-switching diode
BA892	INFINEON	获取价格	Silicon Rf Switching Diode Preliminary data
BA892	LRC	获取价格	Band-switching diode
BA892-02L	INFINEON	获取价格	Silicon RF Switching Diode
BA892-02L-E6327	INFINEON	获取价格	Rectifier Diode, 1 Element, 35V V(RRM),
BA892-02L-E6433	INFINEON	获取价格	Rectifier Diode, 1 Element, 35V V(RRM),
BA892-02V	INFINEON	获取价格	Silicon RF Switching Diode
BA892-02V-E6127	INFINEON	获取价格	Rectifier Diode, 1 Element, 35V V(RRM),
BA892-02VE6327	INFINEON	获取价格	For band switching in TV/VTR tuners and mobile applications