Datasheet > BA782S-G3-18

BA782S-G3-18

更新时间： 2024-01-23 16:24:16

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	74K
描述
DIODE BAND SW 100MA SOD323

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中文翻译

获取价格

数据手册

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BA782S-G3-18 数据手册

BAT81S, BAT82S, BAT83S

www.vishay.com

Vishay Semiconductors

Small Signal Schottky Diode

FEATURES

• Integrated protection ring against static

discharge

• Low capacitance

• Low leakage current

• Low forward voltage drop

• Very low switching time

• AEC-Q101 qualified

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

DESIGN SUPPORT TOOLS click logo to get started

APPLICATIONS

• General purpose and switching Schottky barrier diode

• HF-detector

• Protection circuit

Models

Available

• Diode for low currents with a low supply voltage

• Small battery charger

• Power supplies

MECHANICAL DATA

Case: DO-35 (DO-204AH)

Weight: approx. 125 mg

• DC/DC converter for notebooks

Cathode band color: black

Packaging codes/options:

TR/10K per 13" reel (52 mm tape), 50K/box

TAP/10K per ammopack (52 mm tape), 50K/box

PARTS TABLE

TYPE

DIFFERENTIATION

CIRCUIT

CONFIGURATION

PART

ORDERING CODE

TYPE MARKING

REMARKS

BAT81S

BAT82S

BAT83S

_R= 40 V

BAT81S-TR or BAT81S-TAP

BAT82S-TR or BAT82S-TAP

BAT83S-TR or BAT83S-TAP

Single

BAT81S

BAT82S

BAT83S

Tape and reel/ammopack

V_R= 50 V

V_R= 60 V

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

BAT81S

BAT82S

BAT83S

V_R

Reverse voltage

Forward continuous current

Peak forward surge current

Repetitive peak forward current

I_F

I_FSM

I_FRM

500

150

t_p≤ 10 ms

t_p≤ 1 s

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

320

125

UNIT

K/W

°C

Thermal resistance junction to ambient air

Junction temperature

I = 4 mm, T_L= constant

Storage temperature range

T_stg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

330

410

1000

200

UNIT

I_F= 0.1 mA

I_F= 1 mA

I_F= 15 mA

V_R= V_Rmax.

V_F

I_R

Forward voltage

Reverse current

Diode capacitance

V_R= 1 V, f = 1 MHz

C_D

1.6

Rev. 2.0, 04-Apr-17

Document Number: 85512

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与BA782S-G3-18相关器件

型号	品牌	获取价格	描述	数据表
BA782S-GS08	VISHAY	获取价格	Rectifier Diode, 1 Element,
BA782S-GS18	VISHAY	获取价格	Rectifier Diode, 1 Element,
BA782S-HE3-08	VISHAY	获取价格	Mixer Diode, Ultra High Frequency, Silicon, ROHS COMPLIANT PACKAGE-2
BA782S-HE3-18	VISHAY	获取价格	Mixer Diode, Ultra High Frequency, Silicon, ROHS COMPLIANT PACKAGE-2
BA782S-HG3-08	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2
BA782S-HG3-18	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2
BA782S-V	VISHAY	获取价格	Band Switching Diodes
BA782-V	VISHAY	获取价格	Band Switching Diodes
BA783	KEXIN	获取价格	Bandswitching Diodes
BA783	VISHAY	获取价格	Bandswitching Diodes

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