Datasheet > BA782

BA782

更新时间： 2024-01-30 10:16:17

品牌	Logo	应用领域
科信 - KEXIN		二极管光电二极管
页数	文件大小	规格书
1页	34K
描述
Bandswitching Diodes

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中文翻译

获取价格

技术参数
数据手册

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BA782 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.76
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1 V
元件数量：	1	最高工作温度：	125 °C
最大输出电流：	0.1 A	最大重复峰值反向电压：	35 V
子类别：	Rectifier Diodes	表面贴装：	YES
Base Number Matches：	1

BA782 数据手册

SMD Type

Diodes

Bandswitching Diodes

BA782; BA783

SOD-123

Unit: mm

+0.1

2.7

-0.1

+0.05

1.1

-0.05

Features

Silicon Epitaxial Planar Diode Switches

For high-speed switching application and TV tuners in the frequency range

of 50 1000 MHz. The dynamic for ward resistance is constant and very small

+0.1

3.7

-0.1

0.1max

over a wide range of frequency and forward current.The reverse capacitance is

also small and largely independent of the reverse voltage.

These diodes are also available in SOD-323 case with the type designations

BA782S and BA783S.

0.50

0.35

Absolute M axim um Ratings Ta = 25

Param eter

Sym bol

Value

Unit

Reverse Voltage

V^R

100

m A

Forward Continuous Current at Tam b = 25

Junction Tem perature

T^j

125

Storage Tem perature Range

-55 to +150

Electrical C haracteristics T a = 25

P aram eter

Forward V oltage at I^F= 100 m A

Leakage C urrent at V ^R= 20 V

D ynam ic Forward R esistance

S ym bol

M in

Typ

M ax

U nit

V (BR )

at f = 50 to 1000 M H z, I^F= 3 m A

B A 782

0.7

1.2

0.5

0.9

r^f

B A 783

B A 782

B A 783

at f = 50 to 1000 M H z, I^F= 10 m A

C apacitance

at V ^R= 1 V , f = 1 M H z

at V ^R= 3 V , f = 1 M H z

1.5

1.25

1.2

C ^{t ot}

B A 782

B A 783

S eries Inductance across C ase

2.5

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中文翻译

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