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BA779S

更新时间: 2024-11-17 06:41:23
品牌 Logo 应用领域
科信 - KEXIN 二极管测试光电二极管衰减器
页数 文件大小 规格书
1页 35K
描述
Silicon PIN Diodes

BA779S 数据手册

  
SMD Type  
Diodes  
Silicon PIN Diodes  
BA779;BA779S  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Features  
3
Wide frequency range 10 MHz to 1 GHz  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Absolute Maximum Ratings Ta = 25  
Parameter  
Reverse Voltage  
Symbol  
VR  
Test Conditions  
Value  
30  
Unit  
V
Forward Current  
IF  
50  
mA  
Junction Temperature  
Storage temperature range  
Junction ambient  
Tj  
125  
Tstg  
RthJA  
-55 to +125  
500  
K/W  
on PC board 50mm 50mm 1.6mm  
Electrical Characteristics Ta = 25  
Parameter  
Forward Voltage  
Symbol  
Conditions  
IF = 20 mA  
Min  
Typ  
Max  
Unit  
V
VF  
IR  
1
Reverse Current  
VR = 30 V  
50  
0.5  
50  
nA  
pF  
Diode capacitance  
CD  
rf  
f = 100 MHz, VR = 0  
f = 100 MHz, IF = 1.5 mA  
Differential forward resistance  
BA799  
Reverse impedance  
BA799S  
5
9
zr  
ô
f = 100 MHz, VR = 0  
K
Minority carrier lifetime  
IF = 10 mA, IR = 10 mA  
4
S
1
www.kexin.com.cn  

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