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BA779-2-GS18 PDF预览

BA779-2-GS18

更新时间: 2024-01-25 13:47:34
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 99K
描述
RF PIN Diodes - Dual in SOT-23

BA779-2-GS18 数据手册

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BA779-2  
Vishay Semiconductors  
RF PIN Diodes - Dual in SOT-23  
Features  
• Wide frequency range 10 MHz to 1 GHz  
• Lead (Pb)-free component  
2
3
e3  
• Component in accordance to  
1
RoHS 2002/95/EC and WEEE 2002/96/EC  
1
2
18256  
3
Applications  
Current controlled HF resistance in adjustable  
attenuators  
Packaging Codes/Options:  
Mechanical Data  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Case: SOT-23 Plastic case  
Weight: approx. 8.1 mg  
Parts Table  
Part  
Type differentiation  
Ordering code  
Remarks  
Tape and Reel  
BA779-2  
VR = 30 V, Zr > 5 k  
BA779-2-GS18 or BA779-2-GS08  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VR  
Value  
30  
Unit  
V
Reverse voltage  
Forward current  
IF  
50  
mA  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction ambient  
Test condition  
Symbol  
RthJA  
Value  
500  
Unit  
K/W  
on PC board  
50 mm x 50 mm x 1.6 mm  
Junction temperature  
Tj  
125  
°C  
°C  
Storage temperature range  
Tstg  
- 55 to + 125  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IF = 20 mA  
R = 30 V  
f = 100 MHz, VR = 0  
Symbol  
Min  
Typ.  
Max  
1
Unit  
V
Forward voltage  
Reverse current  
Diode capacitance  
VF  
IR  
V
50  
nA  
pF  
CD  
0.5  
Document Number 85531  
Rev. 1.6, 14-Apr-05  
www.vishay.com  
1

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