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BA6129 PDF预览

BA6129

更新时间: 2022-11-26 10:41:43
品牌 Logo 应用领域
罗姆 - ROHM 电池
页数 文件大小 规格书
9页 109K
描述
Reset IC with battery backup function

BA6129 数据手册

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Memory ICs  
Reset IC with battery backup function  
BA6129AF / BA6162 / BA6162F  
The BA6129AF, BA6162, and BA6162F are reset ICs with a battery backup function, designed for equipment using  
SRAMs and other similar components. These ICs are configured of a reset signal and CS signal output unit and a  
power supply switching unit. If the BA6129AF detects that the power supply has dropped to 3.5V or lower, it outputs  
the CS, CSB, and Reset signals to set the SRAM in backup mode. If the voltage drops to 3.3V or lower, the power  
supply switches to the battery. With the BA6162 and BA6162F, in the same way, a power supply of 4.2V is detected,  
and if the voltage drops to 3.3V or lower, the power supply switches to the battery. These ICs allow SRAMs to be  
write protected and allow the system to be reset, in addition to switching between the power supply and the battery.  
Applications  
Equipment using SRAMs (cards, cassettes, facsimile machines, copiers, word processors, personal computers, etc.)  
Features  
1) Equipped with battery backup function.  
2) Equipped with both CS signals (CS and CSB) and  
Reset signals.  
4) Low voltage loss when powered from battery.  
5) Smooth switching between power supply and bat-  
tery.  
3) Low current dissipation when powered from battery.  
Absolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
VCC  
Limits  
7.0  
Unit  
V
Power supply voltage  
– 80 (BA6129AF)  
Output current 1  
Output current 2  
IOUT1  
IOUT2  
mA  
– 40 (BA6162 / BA6162F)  
– 200  
µA  
900 1 (BA6162)  
550 2 (BA6129AF)  
(BA6162F)  
Power dissipation  
Pd  
mW  
Operating temperature  
Storage temperature  
Topr  
Tstg  
– 20 ~ + 75  
°C  
°C  
– 40 ~ + 125  
IOUT1 indicates the output current on the VCC side, and IOUT2 the output current on the VBAT side.  
1 Reduced by 9.0mW for each increase in Ta of 1°C over 25°C.  
2 Reduced by 5.5mW for each increase in Ta of 1°C over 25°C.  
1

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