Datasheet > BA158

BA158

更新时间： 2024-11-12 12:55:07

品牌	Logo	应用领域
辰达行 - MDD		二极管 IOT
页数	文件大小	规格书
2页	74K
描述
Reverse Voltage - 400 to 1000 Volts Forward Current -1.0 Ampere

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BA158 数据手册

BA157 THRU BA159

FAST RECOVERY RECTIFIERS

1.0 Ampere

Reverse Voltage - 400 to 1000 Volts Forward Current -

FEATURES

DO-41

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Fast switching for high efficiency

1.0 (25.4)

MIN.

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

0.107(2.7)

0.080(2.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.205(5.2)

0.166(4.2)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.034(0.86)

0.028(0.70)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

MDD Catalog

SYMBOLS

Number

UNITS

BA157

BA158

BA159

Maximum repetitive peak reverse voltage

Maximum RMS voltage

400

280

400

600

420

600

1000

700

VOLTS

VRRM

VRMS

VDC

1000

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I(AV)

1.0

Amp

IFSM

30.0

1.3

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

TA=25 C

TA=100 C

(NOTE 1)

5.0

50.0

trr

150

250

500

Typical junction capacitance (NOTE 2)

RθJA

C/W

15.0

50.0

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

TJ,TSTG

-65 to +150

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

MDD ELECTRONIC

中文翻译

下载PDF

与BA158相关器件

型号	品牌	获取价格	描述	数据表
BA158(G)	LGE	获取价格	快恢复二极管
BA158/100	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/4E	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/4F	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/4G	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/4H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/53	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA158/56	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

与BA158相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

BA158

BA158 数据手册

与BA158相关器件

与BA158相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BA158

BA158 数据手册

与BA158相关器件

与BA158相关文章

您还可以找

您在本页遇到什么问题？