Datasheet > BA157GPHE3/73

BA157GPHE3/73

更新时间： 2024-09-23 22:04:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	66K
描述
DIODE GEN PURP 400V 1A DO204AL

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中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BA157GPHE3/73 数据手册

BA157GP, BA158GP, BA159DGP, BA159GP

www.vishay.com

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Plastic Rectifier

FEATURES

SUPERECTIFIER^®

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current, typical I_Rless than 0.1 μA

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-41 (DO-204AL)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

I_F(AV)

1.0 A

For general purpose of medium frequency rectification.

V_RRM

400 V, 600 V, 800 V, 1000 V

MECHANICAL DATA

I_FSM

20 A

150 ns, 250 ns, 500 ns

5.0 μA

Case: DO-41 (DO-204AL), molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

t_rr

I_R

V_F

1.3 V

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

175 °C

E3 suffix meets JESD 201 class 1A whisker test

Package

DO-41 (DO-204AL)

Single

Polarity: color band denotes cathode end

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL BA157GP

BA158GP BA159DGP BA159GP UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

1000

Maximum average forward rectified current 0.375" (9.5 mm)

lead length at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL BA157GP

BA158GP BA159DGP BA159GP UNIT

Maximum instantaneous forward voltage 1.0 A

V_F

I_R

1.3

5.0

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25 °C

μA

I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

Maximum reverse recovery time

Typical junction capacitance

t_rr

150

250

500

4.0 V, 1 MHz

C_J

Revision: 29-Apr-2020

Document Number: 88537

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

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BA157GPHE3/73 替代型号

型号	品牌	替代类型	描述	数据表
BA157GPHE3/54	VISHAY	类似代替	DIODE GEN PURP 400V 1A DO204AL
BA157GP-E3/73	VISHAY	类似代替	DIODE GEN PURP 400V 1A DO204AL

与BA157GPHE3/73相关器件

型号	品牌	获取价格	描述	数据表
BA157GP-HE3/73	VISHAY	获取价格	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
BA157GP-M3/54	VISHAY	获取价格	DIODE GEN PURP 400V 1A DO204AL
BA157GP-TP	MCC	获取价格	暂无描述
BA157-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
BA157-LFR	FRONTIER	获取价格	1A FAST RECOVERY PLASTIC RECTIFIER
BA157PT	CHENMKO	获取价格	FAST RECOVERY RECTIFIER VOLTAGE RANGE 400 - 1000 Volts CURRENT 1.0 Ampere
BA157T	STMICROELECTRONICS	获取价格	RECTIFIER DIODE,400V V(RRM),DO-15
BA157-T	MCC	获取价格	Rectifier Diode,
BA157-T/B	FRONTIER	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
BA157-T/R	FRONTIER	获取价格	Rectifier Diode, 1 Element, 1A, Silicon

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