Datasheet > BA157-TB-LF

BA157-TB-LF

更新时间： 2024-09-24 19:58:43

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	52K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

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BA157-TB-LF 数据手册

WTE

POWER SEMICONDUCTORS

BA157 – BA159

1.0A FAST RECOVERY DIODE

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: DO-41, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

DO-41

Dim

Min

25.4

4.06

0.71

2.00

Max

—

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

BA157

BA158

BA159

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

400

280

600

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

420

1.0

Average Rectified Output Current

(Note 1)

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.2

Peak Reverse Current

@T_A= 25°C

5.0

100

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

t^rr

C^j

150

250

500

°C

T^j

-65 to +125

-65 to +150

Storage Temperature Range

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

BA157 – BA159

1 of 4

12 3 4

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