Datasheet > B772-TO-92

B772-TO-92

更新时间： 2024-09-24 08:46:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
1页	32K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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B772-TO-92 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

B772 TRANSISTOR (PNP)

TO-92

FEATURES

Power dissipation

1. EMITTER

2. COLLECTOR

3. BASE

P_CM:

625 mW (Tamb=25℃)

Collector current

I_CM:

-3

Collector-base voltage

1 2 3

V_(BR)CBO

-40

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic=-100µA ,I_E=0

I_C= -10 mA , I_B=0

I_E= -100µA, I_C=0

V_CB= -40 V, I_E=0

V_CE=-30 V, I_B=0

V_EB=-6V, I_C=0

MIN

-40

-30

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-1

-10

-1

µA

I_CEO

Collector cut-off current

I_EBO

Emitter cut-off current

h_FE(1)

V_CE= -2V, I_C= -1A

V_CE=-2V, I_C= -100mA

I_C=-2A, I_B= -0.2A

400

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

-0.5

-1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE= -5V, I_C=-0.1A

MHz

Transition frequency

f _T

f = 10MHz

CLASSIFICATION OF h_FE(1)

Rank

60-120

100-200

160-320

200-400

Range

中文翻译

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