Datasheet > B772

B772

更新时间： 2024-09-29 22:27:15

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	44K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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数据手册

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B772 数据手册

Spec. No. : HE6605

Issued Date : 1993.05.15

Revised Date : 2002.05.08

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HSB772

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSB772 is designed for using in output stage of 1w audio

amplifier, voltage regulator, DC-DC converter and relay driver.

TO-126ML

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C).................................................................................... 1.4 W

Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage...................................................................................... -40 V

BVCEO Collector to Emitter Voltage................................................................................... -30 V

BVEBO Emitter to Base Voltage........................................................................................... -5 V

IC Collector Current (DC) ..................................................................................................... -3 A

IC Collector Current (Pulse) ................................................................................................ -7 A

IB Base Current (DC) ....................................................................................................... -0.6 A

Electrical Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

-40

-30

-5

100

IC=-100uA

IC=-1mA

IE=-10uA

VCB=-30V

VEB=-3V

IC=-2A, IB=-0.2A

IC=-20mA, VCE=-2V

IC=-1A, VCE=-2V

IC=-0.1A, VCE=-5V

VCB=-10V, f=1MHz, IE=0

-1

-0.5

-2

400

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

-0.3

-1

200

MHz

Cob

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE2

Rank

Range

100-200

160-320

200-400

HSB772

HSMC Product Specification

12 3 4

中文翻译

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