Datasheet > B772

B772

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	539K
描述
SOT-89

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中文翻译

获取价格

数据手册

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B772 数据手册

B772

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to D882

 Low Speed Switching

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

-40

-30

Collector-Emitter Voltage

Emitter-Base Voltage

-6

Collector Current

-3

Collector Power Dissipation

500

°C/W

°C

R_θJA

Thermal Resistance From Junction To Ambient

Junction Temperature

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =-100uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-30

-6

，

V(BR)CEO

V(BR)EBO

I_CBO

I =-10mA I =0

，

I_E=-100uA，I_C=0

-1

V_CB=-40V, I_E=0

Collector cut-off current

V_CE=-30V, I_B=0

I_CEO

-10

Emitter cut-off current

V_EB=-6V, I_C=0

I_EBO

h_FE

-1

DC current gain

400

-0.5

-1.5

V_CE=-2V, I_C=-1A

I_C=-2A，I_B=-0.2A

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

V_CE=-5V,I_C=-0.1A,f=10

MHz

f_T

MHz

CLASSIFICATION OF h_FE

Rank

200-400

Range

60-120

100-200

160-320

Marking

B772

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